SSM5H06FE - Silicon Epitaxial Schottky Barrier Diode

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Toshiba Semiconductor

Datasheet Details

Part number	SSM5H06FE
Manufacturer	Toshiba Semiconductor
File Size	147.74 KB
Description	Silicon Epitaxial Schottky Barrier Diode
Datasheet	SSM5H06FE Datasheet
Additional preview pages of the SSM5H06FE datasheet.

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Full PDF Text Transcription

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SSM5H06FE Silicon N Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM5H06FE DC-DC Converter • • Combined Nch MOSFET and Schottky Diode in one Package. Small package Unit: mm 1.6±0.05 1.2±0.05 0.2±0.05 Absolute Maximum Ratings (Ta = 25°C) MOSFET 1.6±0.05 1.0±0.05 0.5 Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature DC Pulse Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) Tch Rating 20 ±10 100 200 150 150 Unit V V mA mW °C 1 2 3 5 0.5 4 0.12±0.05 4.Cathode 5.

Published: Sep 19, 2014 |