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SSM5H12TU - Silicon Epitaxial Schottky Barrier Diode

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Part number SSM5H12TU
Manufacturer Toshiba Semiconductor
File Size 178.50 KB
Description Silicon Epitaxial Schottky Barrier Diode
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SSM5H12TU Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode SSM5H12TU DC-DC Converter Applications • • • 1.8-V drive Combined an N-ch MOSFET and a Schottky barrier diode in one package. Low RDS (ON) and Low VF Unit: mm Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP PD (Note 1) t = 10s Tch Rating 30 ± 12 1.9 3.8 0.5 0.8 150 Unit V V A Power dissipation Channel temperature W °C UFV JEDEC ― ― 2-2R1A Schottky Barrier Diode (Ta = 25°C) Characteristics Repetitive peak reverse voltage Average forward current Peak one cycle surge forward current Junction temperature Symbol VRRM IF(AV) IFSM Tj Rating 30 0.7 2 (50Hz) 125 Unit V A A °C JEITA TOSHIBA Weight: 7 mg (typ.
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