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K365. For precise diagrams, and layout, please refer to the original PDF.
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK365 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications 2SK365 Un...
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witch, Constant Current and Impedance Converter Applications 2SK365 Unit: mm · High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) · Low RDS (ON): RDS (ON) = 80 Ω (typ.) (IDSS = 5 mA) · Small package Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating -50 10 200 125 -55~125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-4E1C Weight: 0.13 g (typ.) Characteristics Symbol Test Condition Min Typ.
K365 Datasheet
