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K3652. For precise diagrams, and layout, please refer to the original PDF.
This product complies with the RoHS Directive (EU 2002/95/EC). Power MOSFETs 2SK3652 N-channel enhancement mode MOSFET 3.3±0.3Product lifecyclennuaen ■ Features • Low on-...
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cement mode MOSFET 3.3±0.3Product lifecyclennuaen ■ Features • Low on-resistance, low Qg • High avalanche resistance ■ Applications • For PDP • For high-speed switching ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability * VDSS VGSS ID IDP EAS 230 ±30 50 200 2 200 V V A A mJ Power dissipation Junction temperature Storage temperature Ta = 25°C PD Tj Tstg 100 3 150 −55 to +150 W °C °C Note) *: L = 1 mH, IL = 50 A, VDD = 100 V, 1 pulse, Ta = 25°C 18.6±0.5stage.dc (2.0) Solder Dip 26.5±0.5e/ (
K3652 Datasheet
