Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability.
VDSS VGSS
ID IDP EAS
230 ±30 20 80 570
V V A A mJ
Power
dissipation
Ta = 25°C
Channel temperature
Storage temperature
PD 100 3
Tch 150 Tstg.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K3628. For precise diagrams, and layout, please refer to the original PDF.
Power MOSFETs 2SK3628 Silicon N-channel power MOSFET For hihg-speed switching 15.0±0.3 11.0±0.2 Unit: mm 5.0±0.2 (3.2) (0.7) ■ Features • Avalanche energy capability guar...
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: mm 5.0±0.2 (3.2) (0.7) ■ Features • Avalanche energy capability guaranteed • High-speed switching • Low ON resistance Ron • No secondary breakdown ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability * VDSS VGSS ID IDP EAS 230 ±30 20 80 570 V V A A mJ Power dissipation Ta = 25°C Channel temperature Storage temperature PD 100 3 Tch 150 Tstg −55 to +150 W °C °C Note) *: L = 2.23 mH, IL = 20 A, VDD = 50 V, 1 pulse, Ta = 25°C 16.2±0.5 (3.2) (2.3) Solder Dip 21.0±0.5 15.0±0.2 φ 3.2±0.1 2.0±0.2
K3628 Datasheet
