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K3670 - Silicon N-Channel MOS Type Field Effect Transistor

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Part number K3670
Manufacturer Toshiba
File Size 164.41 KB
Description Silicon N-Channel MOS Type Field Effect Transistor
Datasheet download datasheet K3670 Datasheet

Full PDF Text Transcription for K3670 (Reference)

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2SK3670 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3670 Chopper Regulator and DC−DC Converter Applications Unit: mm z 2.5V-Gate Drive z Low dr...

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r and DC−DC Converter Applications Unit: mm z 2.5V-Gate Drive z Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance: |Yfs| = 2.1 S (typ.) z Low leakage current: IDSS = 100 μA (max) (VDS = 150 V) z Enhancement mode: Vth = 0.5 to 1.