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K368 - 2SK368

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Datasheet Details

Part number K368
Manufacturer Toshiba
File Size 141.64 KB
Description 2SK368
Datasheet download datasheet K368 Datasheet

Full PDF Text Transcription for K368 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K368. For precise diagrams, and layout, please refer to the original PDF.

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK368 Audio Frequency and High Voltage Amplifier Applications Constant Current Applications 2SK368 Unit: ...

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age Amplifier Applications Constant Current Applications 2SK368 Unit: mm · High breakdown voltage: VGDS = −100 V (min) · High input impedance: IGSS = −1.0 nA (max) (VGS = −80 V) · Small package Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating -100 10 150 125 -55~125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1B Weight: 0.012 g (typ.