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K368. For precise diagrams, and layout, please refer to the original PDF.
K368-VB K368-VB Datasheet P-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 100 0.50 at VGS = - 10 V 0.56 at VGS = - 6.0 V ID (A) - 1.5 - ...
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) (Ω) - 100 0.50 at VGS = - 10 V 0.56 at VGS = - 6.0 V ID (A) - 1.5 - 1.4 Qg (Typ.) 7.7 TO-236 (SOT-23) G1 S2 3D FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • Ultra Low On-Resistance • Small Size APPLICATIONS • Active Clamp Circuits in DC/DC Power Supplies Top View ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS - 100 V VGS ± 20 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C ID - 1.65 - 1.55 - 1.5 - 1.4 Pulsed Drain Current IDM - 3.0 A Continuous Source Current (Diode
K368 Datasheet
