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K3659. For precise diagrams, and layout, please refer to the original PDF.
DATA SHEET www.DataSheet4U.com MOS FIELD EFFECT TRANSISTOR 2SK3659 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3659 is N-channel MOS FET device that features a l...
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DESCRIPTION The 2SK3659 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. ORDERING INFORMATION PART NUMBER 2SK3659 PACKAGE Isolated TO-220 FEATURES •4.5V drive available. •Low on-state resistance, RDS(on)1 = 5.7 mΩ MAX. (VGS = 10 V, ID = 40 A) •Low gate charge, QG = 32 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 65 A) •Built-in gate protection diode. •Avalanche capability ratings. •Isolated TO-220 package.
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K3659 Datasheet
