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K3639. For precise diagrams, and layout, please refer to the original PDF.
DATA SHEET MOS FIELD EFFECT TRANSISTOR www.DataSheet4U.com 2SK3639 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3639 is N-channel MOS FET device that features a l...
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DESCRIPTION The 2SK3639 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. ORDERING INFORMATION PART NUMBER 2SK3639-ZK PACKAGE TO-252 (MP-3ZK) (TO-252) FEATURES • Low on-state resistance RDS(on)1 = 5.5 mΩ MAX. (VGS = 10 V, ID = 32 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 4.5 V, ID = 32 A) • Low Ciss: Ciss = 2400 pF TYP.
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K3639 Datasheet
