Datasheet4U Logo Datasheet4U.com

XP161A1355PR-G - Power MOSFET

Description

The XP161A1355PR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

A gate protect diode is built-in to prevent static damage.

Features

  • Low On-State Resistance : Rds(on)=0.05Ω@Vgs=4.5V : Rds(on)=0.07Ω@Vgs=2.5V : Rds(on)=0.15Ω@Vgs=1.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 1.5V N-Channel Power MOSFET DMOS Structure Package : SOT-89 11 3x 1.
  • PIN.

📥 Download Datasheet

Datasheet preview – XP161A1355PR-G

Datasheet Details

Part number XP161A1355PR-G
Manufacturer Torex
File Size 0.97 MB
Description Power MOSFET
Datasheet download datasheet XP161A1355PR-G Datasheet
Additional preview pages of the XP161A1355PR-G datasheet.

📁 Similar Datasheet

Other Datasheets by Torex

Full PDF Text Transcription

Click to expand full text
XP161A1355PR-G Power MOSFET ETR11024-004 ■GENERAL DESCRIPTION The XP161A1355PR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible. ■APPLICATIONS ●Notebook PCs ●Cellular and portable phones ●On-board power supplies ●Li-ion battery systems ■FEATURES Low On-State Resistance : Rds(on)=0.05Ω@Vgs=4.5V : Rds(on)=0.07Ω@Vgs=2.5V : Rds(on)=0.15Ω@Vgs=1.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 1.
Published: |