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NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance: 0.09Ω (max) NUltra High-Speed Switching NSOT-89 Package
GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems
The XP161A0390PR is an N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOT-89 package makes high density mounting possible.
Low on-state resistance : Rds(on)=0.09Ω(Vgs=4.5V) : Rds(on)=0.13Ω(Vgs=2.5V) : Rds(on)=0.3Ω(Vgs=1.5V) Ultra high-speed switching Operational Voltage : 1.
XP161A0390PR Datasheet
