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NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance : 0.05Ω (max) NUltra High-Speed Switching NSOT-89 Package NGate Protect Diode Built-in
GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems
The XP161A1355PR is an N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible.
Low on-state resistance : Rds (on) = 0.05Ω ( Vgs = 4.5V ) : Rds (on) = 0.07Ω ( Vgs = 2.5V ) : Rds (on) = 0.15Ω ( Vgs = 1.5V ) Ultra high-speed switching Gate protect diode built-in Operational Voltage : 1.
XP161A1355PR Datasheet
