XP151A12A2MR-G
DESCRIPTION
The XP151A12A2MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.
- APPLICATIONS
- Notebook PCs
- Cellular and portable phones
- On-board power supplies
- Li-ion battery systems
- FEATURES
Low On-State Resistance : Rds(on) = 0.1Ω@ Vgs = 4.5V
: Rds(on) = 0.16Ω@ Vgs = 2.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage
: 2.5V
N-Channel Power MOSFET
DMOS Structure
Small Package
: SOT-23
Environmentally Friendly : EU Ro HS pliant, Pb Free
- PIN CONFIGURATION/ MARKING
- PRODUCT NAMES
11 2 x
G：Gate S：Source D：Drain
PRODUCTS
PACKAGE
ORDER UNIT
XP151A12A2MR
SOT-23
3,000/Reel
XP151A12A2MR-G(- )
SOT-23
3,000/Reel
(- ) The “-G” suffix denotes Halogen and Antimony free as...
