XP151A12A2MR
Description
The XP151A12A2MR is a N-Channel Power MOS FET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible.
Features
Low on-state resistance : Rds (on) = 0.1 Ω ( Vgs = 4.5V ) Rds (on) = 0.16 Ω ( Vgs = 2.5V ) Ultra high-speed switching Gate Protect Diode Built-in Operational Voltage : 2.5V High density mounting : SOT
- 23
Pin Configuration
Pin Assignment
D 3 u
PIN NUMBER 1 2 3
PIN NAME G S D
FUNCTION Gate Source Drain
1 G
2 S
- 23 Top View
Equivalent Circuit
Absolute Maximum Ratings
Ta=25 OC PARAMETER Drain
- Source Voltage Gate
- Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS 20 + 12 1 4 1 0.5 150 -55 to 150 UNITS V V A A A...
