Datasheet4U Logo Datasheet4U.com

XP131A0616SR - Power MOS FET

Description

The XP131A0616SR is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

The small SOP-8 package makes high density mounting possible.

Features

  • Low on-state resistance: Rds(on)=0.016Ω(Vgs=4.5V) Rds(on)=0.022Ω(Vgs=2.5V) Rds(on)=0.045Ω(Vgs=1.5V) Ultra high-speed switching Operational Voltage: 1.5V High density mounting: SOP-8 Pin Configuration S1 S2 S3 G4 SOP-8 (TOP VIEW) 8D 7D 6D 5D Equivalent Circuit 18 27 36 45 N-Channel MOS FET (1 device built-in) Pin Assignment PIN NUMBER PIN NAME 1~3 S 4G 5~8 D.

📥 Download Datasheet

Datasheet preview – XP131A0616SR

Datasheet Details

Part number XP131A0616SR
Manufacturer Torex Semiconductor
File Size 60.99 KB
Description Power MOS FET
Datasheet download datasheet XP131A0616SR Datasheet
Additional preview pages of the XP131A0616SR datasheet.
Other Datasheets by Torex Semiconductor

Full PDF Text Transcription

Click to expand full text
N-Channel Power MOS FET DMOS Structure Low On-State Resistance: 0.016Ω MAX Ultra High-Speed Switching SOP-8 Package Applications Notebook PCs Cellular and portable phones On-board power supplies Li-ion battery systems General Description The XP131A0616SR is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible. Features Low on-state resistance: Rds(on)=0.016Ω(Vgs=4.5V) Rds(on)=0.022Ω(Vgs=2.5V) Rds(on)=0.045Ω(Vgs=1.5V) Ultra high-speed switching Operational Voltage: 1.
Published: |