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VN12C - N-Channel Enhancement-Mode Vertical DMOS Power FETs

Key Features

  • o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low Crss and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices JO(ON) (min) 6.0A 6.0A.

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Datasheet Details

Part number VN12C
Manufacturer Supertex Inc
File Size 238.08 KB
Description N-Channel Enhancement-Mode Vertical DMOS Power FETs
Datasheet download datasheet VN12C Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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"§upertexinc. VN12C N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVossl BVDGS 160V 200V ROS(ON) (max) In 1n Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low Crss and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices JO(ON) (min) 6.0A 6.0A Applications o Motor control o Converters o Amplifiers o Switches o Power supply circuits o Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.