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tlCrSiliconix
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PRODUCT SUMMARY
PART V(BR)OSS rOS(ON) 10
NUMBER
(V)
(n)
(A)
PACKAGE
VN12068
120
6
0.59 TO-205AD
VN1206D 120
6
1.19 TO-220
Performance Curves: VNDQ12 (See Section 7)
VN1206B, VN1206D
N-Channel Enhancement-Mode MOS Transistors
TO-20SAO (TO-39)
BOTTOM VIEW
TO-220
1 SOURCE 2 GATE 3 DRAIN & CASE
TOP VIEW
o
1 GATE 2 & TAB - DRAIN 3 SOURCE
123
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) 2
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Vos
Gate-Source Voltage
VGS
Continuous Drain Current Pulsed Drain Current 1
Tc= 25°C Tc = 100°C
Power Dissipation
Tc= 2SoC Tc = 100°C
Operating Junction and Storage Temperature
Lead Temperature (1116" from case for 10 seconds)
10 10M
Po TJ.
VN1206D Datasheet
