VN1206N5 - N-Channel MOSFET

Features

With TO-220 packaging.
High speed switching.
Low gate input resistance.
Standard level gate drive.
Easy to use.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	VN1206N5
Manufacturer	INCHANGE
File Size	255.64 KB
Description	N-Channel MOSFET
Datasheet	VN1206N5 Datasheet
Additional preview pages of the VN1206N5 datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 9 IDM Drain Current-Single Pulsed 35 PD Total Dissipation 45 Tj Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 2.

Published: Oct 7, 2020 |