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PRODUCT SUMMARY
PART V(BR)OSS rOS(ON) 10
NUMBER
(V)
(n)
(A)
PACKAGE
VN1206L
120
6
0.23
TO-92
VN1206M 120
6
0.26 TO-237
Performance Curves: VNDQ12 (See Section 7)
VN1206L, VN1206M
N-Channel Enhancement-Mode MOS Transistors
TO-92
BOTTOM VIEW
1 SOURCE 2 GATE 3 DRAIN
TO-237
BOTTOM VIEW
1 SOURCE 2 GATE 3 & TAB - DRAIN
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Vos
Gate-Source Voltage
VGS
Continuous Drain Current Pulsed Drain Current 1
TA= 25°C TA = 100°C
Power Dissipation
TA= 25°C TA = 100°C
Operating Junction and Storage Temperature
Lead Temperature (1/16" from case for 10 seconds)
10 10M Po Tj. T stg
h
VN1206L
VN1206M
120
120
±30 0.23 0.15
±30 0.
VN1206M Datasheet
