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VN1210L - N-Channel Enhancement-Mode MOS Transistors

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Part number VN1210L
Manufacturer Siliconix
File Size 94.88 KB
Description N-Channel Enhancement-Mode MOS Transistors
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fCrSiliconix ~ incorporated VN1210 SERIES N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (il) (A) PACKAGE VN1210L 120 10 0.18 TO-92 VN1210M 120 10 0.20 TO-237 Performance Curves: VNDQ12 (See Section 7) TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN TO-237 BOTTOM VIEW ~ ~ 1 SOURCE 2 GATE 3 DRAIN & TAB ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETERSITEST CONDITIONS SYMBOL Drain-Source Voltage VOS Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current 1 TA= 25°C TA = 100°C Power Dissipation TA= 25°C TA = 100°C Operating Junction and Storage Temperature Lead Temperature (1/16" from case for 10 seconds) 10 10M Po TJ. Tstg TL VN1210L VN1210M 120 120 ±30 0.18 ±30 0.20 0.
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