SSF3617 - MOSFET

Datasheet Summary

Description

The SSF3617 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications.

Features

VDS =-30V,ID =-10A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 18mΩ @ VGS=-10V.
High Power and current handling capability.
Lead free product is acquired.
Surface Mount Package D G S Schematic diagram Marking and pin Assignment.

Silikron Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	SSF3617
Manufacturer	SilikrON Semiconductor
File Size	304.82 KB
Description	MOSFET
Datasheet	SSF3617 Datasheet
Additional preview pages of the SSF3617 datasheet.

📁 Similar Datasheet

SSF3617 - P-Channel MOSFET (GOOD-ARK)
SSF3610 - MOSFET (Silikron Semiconductor Co)
SSF3610 - 30V N-Channel MOSFET (GOOD-ARK)
SSF3610E - N-Channel MOSFET (GOOD-ARK)
SSF3611E - P-Channel MOSFET (GOOD-ARK)
SSF3612 - MOSFET (Silikron Semiconductor Co)
SSF3612 - N-Channel MOSFET (GOOD-ARK)
SSF3612E - N-Channel MOSFET (GOOD-ARK)
SSF3615 - MOSFET (Silikron Semiconductor Co)
SSF3615 - P-Channel MOSFET (GOOD-ARK)

Other Datasheets by Silikron Semiconductor

SSF3610E - MOSFET
SSF3611E - MOSFET
SSF3604 - MOSFET
SSF3605S - MOSFET
SSF3637 - MOSFET
SSF3637S - MOSFET
SSF3639C - MOSFET
SSF3036C - MOSFET

Full PDF Text Transcription

Click to expand full text

SSF3617 DESCRIPTION The SSF3617 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS =-30V,ID =-10A RDS(ON) < 35mΩ @ VGS=-4.

Published: Sep 22, 2016 |