SSF3611E Datasheet PDF - GOOD-ARK P-Channel MOSFET Specs

SSF3611E - P-Channel MOSFET

This page provides the datasheet information for the SSF3611E, a member of the SSF3611E-GOOD P-Channel MOSFET family.

Datasheet Summary

Description

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Features

SOP-8.
Advanced trench MOSFET process technology.
Special designed for PWM, load switching and general purpose.

Datasheet Details

Part number	SSF3611E
Manufacturer	GOOD-ARK
File Size	357.29 KB
Description	P-Channel MOSFET
Datasheet	SSF3611E Datasheet
Additional preview pages of the SSF3611E datasheet.

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Full PDF Text Transcription

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Main Product Characteristics VDSS -30 V RDS(on) 10.6 mΩ(typ.) ID -12A Features and Benefits SOP-8  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature  Lead free product SSF3611E 30V P-Channel MOSFET Marking and Pin Assignment Schematic Diagram Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

Published: Sep 22, 2016 |