Datasheet4U Logo Datasheet4U.com

SSF3610E - N-Channel MOSFET

This page provides the datasheet information for the SSF3610E, a member of the SSF3610E-GOOD N-Channel MOSFET family.

Datasheet Summary

Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Features

  • Advanced MOSFET process technology.
  • Special designed for PWM, load switching and general purpose.

📥 Download Datasheet

Datasheet preview – SSF3610E

Datasheet Details

Part number SSF3610E
Manufacturer GOOD-ARK
File Size 901.88 KB
Description N-Channel MOSFET
Datasheet download datasheet SSF3610E Datasheet
Additional preview pages of the SSF3610E datasheet.

📁 Similar Datasheet

  • SSF3610E - MOSFET (Silikron Semiconductor)
  • SSF3610 - MOSFET (Silikron Semiconductor Co)
  • SSF3611E - MOSFET (Silikron Semiconductor)
  • SSF3612 - MOSFET (Silikron Semiconductor Co)
  • SSF3615 - MOSFET (Silikron Semiconductor Co)
  • SSF3617 - MOSFET (Silikron Semiconductor)
  • SSF3604 - MOSFET (Silikron Semiconductor)
  • SSF3605S - MOSFET (Silikron Semiconductor)
  • SSF3606 - MOSFET (Silikron Semiconductor Co)
  • SSF3608-C - P-Channel MOSFET (SeCoS)
Other Datasheets by GOOD-ARK

Full PDF Text Transcription

Click to expand full text
Main Product Characteristics VDSS 25 V RDS(on) 6.8 mΩ(typ.) ID 18A SOP-8 Features and Benefits  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature  Lead free product SSF3610E 25V N-Chanel MOSFET SSF3610E Marking and Pin Assignment Schematic Diagram Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Published: |