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SSF3612E - N-Channel MOSFET

This page provides the datasheet information for the SSF3612E, a member of the SSF3612E-GOOD N-Channel MOSFET family.

Datasheet Summary

Description

The SSF3612E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.4V while retaining a 12V VGS(MAX) rating.

It is ESD protected.

Features

  • VDS = 25V,ID = 11A RDS(ON) < 20mΩ @ VGS=4.0V RDS(ON) < 17mΩ @ VGS=4.5V RDS(ON) < 12mΩ @ VGS=10V.
  • High Power and current handling capability.
  • Lead free product.
  • Surface Mount Package SSF3612E 25V N-Channel MOSFET Schematic Diagram Marking and Pin Assignment.

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Datasheet preview – SSF3612E

Datasheet Details

Part number SSF3612E
Manufacturer GOOD-ARK
File Size 453.21 KB
Description N-Channel MOSFET
Datasheet download datasheet SSF3612E Datasheet
Additional preview pages of the SSF3612E datasheet.

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Full PDF Text Transcription

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DESCRIPTION The SSF3612E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.4V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. GENERAL FEATURES ● VDS = 25V,ID = 11A RDS(ON) < 20mΩ @ VGS=4.0V RDS(ON) < 17mΩ @ VGS=4.
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