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Main Product Characteristics:
NMOS
PMOS
VDSS
30V
-30V
RDS(on) 32.4mohm 61.6mohm
ID 4A -3.6A
Features and Benefits:
Advanced Process Technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature
SSF3036C
DFN 3x2-8L Bottom View
N-Channel Mosfet P-Channel Mosfet
Schematic diagram
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
SSF3036C Datasheet
