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SSF3051G7 - MOSFET

Datasheet Summary

Description

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Features

  • Advanced trench MOSFET process technology.
  • Special designed for buttery protection, load switching and general power management.
  • Ultra low on-resistance with low gate charge.
  • Fast switching and reverse body recovery.
  • 150℃ operating temperature SSF3051G7  3051G7 D G Marking and pin Assignment  S Schematic diagram       .

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Datasheet Details

Part number SSF3051G7
Manufacturer SilikrON Semiconductor
File Size 564.14 KB
Description MOSFET
Datasheet download datasheet SSF3051G7 Datasheet
Additional preview pages of the SSF3051G7 datasheet.

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Full PDF Text Transcription

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                                 Main Product Characteristics: VDSS -30V RDS(on) 45mohm(typ.) ID -4A SOT23-6  Features and Benefits: „ Advanced trench MOSFET process technology „ Special designed for buttery protection, load switching and general power management „ Ultra low on-resistance with low gate charge „ Fast switching and reverse body recovery „ 150℃ operating temperature SSF3051G7  3051G7 D G Marking and pin Assignment  S Schematic diagram        Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
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