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SSF3056C - MOSFET

Datasheet Summary

Description

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Features

  • -4.5A DFN2X3-8L Bottom View.
  • Advanced trench MOSFET process technology.
  • Special designed for buck-boost circuit, DSC, portable devices and general purpose.

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Datasheet preview – SSF3056C

Datasheet Details

Part number SSF3056C
Manufacturer SilikrON Semiconductor
File Size 432.21 KB
Description MOSFET
Datasheet download datasheet SSF3056C Datasheet
Additional preview pages of the SSF3056C datasheet.

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Full PDF Text Transcription

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Main Product Characteristics: NMOS PMOS VDSS 30V -30V RDS(on) 37mohm(typ.) 68mohm(typ.) D1 NMOS S1 D1 G1 D2 S2 PMOS D2 G2 ID 5A Features and Benefits: -4.5A DFN2X3-8L Bottom View  Advanced trench MOSFET process technology  Special designed for buck-boost circuit, DSC, portable devices and general purpose applications  Ultra low on-resistance with low gate charge  150℃ operating temperature SSF3056C Schematic diagram Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
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