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SSF3051G7 - P-Channel MOSFET

This page provides the datasheet information for the SSF3051G7, a member of the SSF3051G7-GOOD P-Channel MOSFET family.

Datasheet Summary

Description

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Features

  • SOT23-6.
  • Advanced trench MOSFET process technology.
  • Special designed for buttery protection, load switching and general power management.
  • Ultra low on-resistance with low gate charge.
  • Fast switching and reverse body recovery.
  • 150℃ operating temperature.
  • Lead free product SSF3051G7 30V P-Channel MOSFET 3051G7 D G Marking and Pin Assignment S Schematic Diagram.

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Datasheet preview – SSF3051G7

Datasheet Details

Part number SSF3051G7
Manufacturer GOOD-ARK
File Size 929.60 KB
Description P-Channel MOSFET
Datasheet download datasheet SSF3051G7 Datasheet
Additional preview pages of the SSF3051G7 datasheet.

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Full PDF Text Transcription

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Main Product Characteristics VDSS -30V RDS(on) 45mohm(typ.) ID -4A Features and Benefits: SOT23-6  Advanced trench MOSFET process technology  Special designed for buttery protection, load switching and general power management  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature  Lead free product SSF3051G7 30V P-Channel MOSFET 3051G7 D G Marking and Pin Assignment S Schematic Diagram Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
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