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SSF3314E - N-Channel MOSFET

This page provides the datasheet information for the SSF3314E, a member of the SSF3314E-GOOD N-Channel MOSFET family.

Datasheet Summary

Description

The SSF3314E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating.

It is ESD protected.

Features

  • VDS = 30V,ID = 8A RDS(ON) < 39mΩ @ VGS=2.5V RDS(ON) < 28mΩ @ VGS=3.1V RDS(ON) < 24mΩ @ VGS=4.0V RDS(ON) < 23mΩ @ VGS=4.5V RDS(ON) < 18mΩ @ VGS=10V ESD Rating：2000V HBM.
  • High Power and current handing capability.
  • Lead free product.
  • Surface Mount Package SSF3314E 30V N-Channel MOSFET Schematic Diagram Pin Assignment DFN3×3-8L Bottom View.

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Datasheet preview – SSF3314E

Datasheet Details

Part number SSF3314E
Manufacturer GOOD-ARK
File Size 318.97 KB
Description N-Channel MOSFET
Datasheet download datasheet SSF3314E Datasheet
Additional preview pages of the SSF3314E datasheet.

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Full PDF Text Transcription

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DESCRIPTION The SSF3314E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. GENERAL FEATURES ● VDS = 30V,ID = 8A RDS(ON) < 39mΩ @ VGS=2.5V RDS(ON) < 28mΩ @ VGS=3.1V RDS(ON) < 24mΩ @ VGS=4.0V RDS(ON) < 23mΩ @ VGS=4.
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