Datasheet4U Logo Datasheet4U.com

SSF3365 - MOSFET

Description

The SSF3365 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -30V,ID = -3A RDS(ON) < 140mΩ @ VGS=-4.5V RDS(ON) < 80mΩ @ VGS=-10V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package S Schematic diagram 3365 Marking and pin Assignment.

📥 Download Datasheet

Datasheet preview – SSF3365

Datasheet Details

Part number SSF3365
Manufacturer SilikrON Semiconductor
File Size 194.93 KB
Description MOSFET
Datasheet download datasheet SSF3365 Datasheet
Additional preview pages of the SSF3365 datasheet.

📁 Similar Datasheet

  • SSF3365 - P-Channel MOSFET (GOOD-ARK)
  • SSF3314E - N-Channel MOSFET (GOOD-ARK)
  • SSF3324 - MOSFET (Silikron Semiconductor Co)
  • SSF3324 - N-Channel MOSFET (GOOD-ARK)
  • SSF3338 - MOSFET ( Silikron Semiconductor Co)
  • SSF3338 - N-Channel MOSFET (GOOD-ARK)
  • SSF3339 - P-Channel MOSFET (GOOD-ARK)
  • SSF3341 - P-Channel MOSFET (GOOD-ARK)
  • SSF3341L - P-Channel MOSFET (GOOD-ARK)
  • SSF3341UP - MOSFET (Silikron)
Other Datasheets by Silikron Semiconductor

Full PDF Text Transcription

Click to expand full text
SSF3365 DESCRIPTION The SSF3365 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. D G GENERAL FEATURES ● VDS = -30V,ID = -3A RDS(ON) < 140mΩ @ VGS=-4.
Published: |