SSF3022 - N-Channel MOSFET

Datasheet Summary

Description

The SSF3022 is a new generation of middle voltage and high current N

Channel enhancement mode trench power MOSFET.

This new technology increases the device reliability and electrical parameter repeatability.

SSF3022 is assembled in high reliability and qualified assembly house.

Silikron Semiconductor Co

📥 Download Datasheet

Datasheet Details

Part number	SSF3022
Manufacturer	SilikrON Semiconductor Co
File Size	399.10 KB
Description	N-Channel MOSFET
Datasheet	SSF3022 Datasheet
Additional preview pages of the SSF3022 datasheet.

📁 Similar Datasheet

SSF3028C1 - MOSFET (Silikron)
SSF3002EG1 - MOSFET (Silikron)
SSF3006DB - MOSFET (Silikron)
SSF3006DBC - MOSFET (Silikron)
SSF3035L - MOSFET (Silikron)
SSF3036C - 30V Complementary MOSFET (GOOD-ARK)
SSF3036C - MOSFET (Silikron Semiconductor)
SSF3051G7 - MOSFET (Silikron Semiconductor)
SSF3051G7 - P-Channel MOSFET (GOOD-ARK)
SSF3055 - MOSFET (Silikron Semiconductor)

Other Datasheets by Silikron Semiconductor Co

SSF3022D - N-Channel MOSFET
SSF3014 - N-Channel MOSFET
SSF3018 - N-Channel MOSFET
SSF3018D - N-Channel MOSFET
SSF3117 - Schottky Diode
SSF3324 - MOSFET
SSF3344 - MOSFET
SSF3401 - PWM applications

Full PDF Text Transcription

Click to expand full text

SSF3022 Feathers: Advanced trench process technology Ultra low Rdson, typical 16mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current ID =60A BV=100V Rdson=22mohm www.DataSheet4U.com Description: The SSF3022 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF3022 is assembled in high reliability and qualified assembly house.

Published: Mar 6, 2010 |