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SVSP7N60DD2 - 600V SUPER JUNCTION MOS POWER TRANSISTOR

This page provides the datasheet information for the SVSP7N60DD2, a member of the SVSP7N60FJDD2 600V SUPER JUNCTION MOS POWER TRANSISTOR family.

Datasheet Summary

Description

SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

Features

  • 1 3 1.Gate 2.Drain 3.Source 12 3 TO-220F-3L.
  • 7A,600V, RDS(on)(typ. )=0.48@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Enhanced avalanche capability.
  • Extreme dv/dt rated.
  • High peak current capability 123 TO-220FJD-3L 13 TO-252-2L.

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Datasheet preview – SVSP7N60DD2

Datasheet Details

Part number SVSP7N60DD2
Manufacturer Silan Microelectronics
File Size 347.69 KB
Description 600V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet download datasheet SVSP7N60DD2 Datasheet
Additional preview pages of the SVSP7N60DD2 datasheet.

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Full PDF Text Transcription

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Silan Microelectronics SVSP7N60F(FJD)(D)D2_Datasheet 7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION 2 SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, for example, it is suitable for hard and soft switching topologies. FEATURES 1 3 1.Gate 2.Drain 3.Source 12 3 TO-220F-3L  7A,600V, RDS(on)(typ.)=0.
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