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SVSP65R110SHD4 - 650V SUPER JUNCTION MOS POWER TRANSISTOR

This page provides the datasheet information for the SVSP65R110SHD4, a member of the SVSP65R110P7HD4-SilanSemiconductors 650V SUPER JUNCTION MOS POWER TRANSISTOR family.

Datasheet Summary

Description

SVSP65R110P7(T)(S)(FJD)(L)HD4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

Features

  • 35A, 650V, RDS(on)(typ. )=90mΩ@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant KEY.

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Datasheet preview – SVSP65R110SHD4

Datasheet Details

Part number SVSP65R110SHD4
Manufacturer Silan Semiconductors
File Size 563.31 KB
Description 650V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet download datasheet SVSP65R110SHD4 Datasheet
Additional preview pages of the SVSP65R110SHD4 datasheet.

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Full PDF Text Transcription

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Silan Microelectronics SVSP65R110P7(T)(S)(FJD)(L)HD4_Datasheet 35A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP65R110P7(T)(S)(FJD)(L)HD4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. FEATURES  35A, 650V, RDS(on)(typ.
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