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SVSP65R280FJDD4 - 650V SUPER JUNCTION MOS POWER TRANSISTOR

This page provides the datasheet information for the SVSP65R280FJDD4, a member of the SVSP65R280FJDD4-SilanMicroelectronics 650V SUPER JUNCTION MOS POWER TRANSISTOR family.

Datasheet Summary

Description

SVSP65R280FJD(FJH)(D)(T)D4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

Features

  • 14A, 650V, RDS(on)(typ. )=0.24Ω@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant 2 1 3 1.Gate 2.Drain 3.Source 13 TO-252-2L 12 3 TO-220-3L 123 12 3 TO-220FJH-3L TO-220FJD-3L KEY.

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Datasheet preview – SVSP65R280FJDD4

Datasheet Details

Part number SVSP65R280FJDD4
Manufacturer Silan Microelectronics
File Size 663.49 KB
Description 650V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet download datasheet SVSP65R280FJDD4 Datasheet
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Silan Microelectronics SVSP65R280FJD(FJH)(D)(T)D4_Datasheet 14A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP65R280FJD(FJH)(D)(T)D4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. FEATURES  14A, 650V, RDS(on)(typ.)=0.
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