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SVSP60R033P7HD4 - 600V SUPER JUNCTION MOS POWER TRANSISTOR

This page provides the datasheet information for the SVSP60R033P7HD4, a member of the SVSP60R033P7HD4-SilanMicroelectronics 600V SUPER JUNCTION MOS POWER TRANSISTOR family.

Datasheet Summary

Description

SVSP60R033P7HD4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

Features

  • 83A, 600V, RDS(on)(typ. )=28.5mΩ@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant 123 TO-247-3L KEY.

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Datasheet preview – SVSP60R033P7HD4

Datasheet Details

Part number SVSP60R033P7HD4
Manufacturer Silan Microelectronics
File Size 466.82 KB
Description 600V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet download datasheet SVSP60R033P7HD4 Datasheet
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Full PDF Text Transcription

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Silan Microelectronics SVSP60R033P7HD4_Datasheet 83A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP60R033P7HD4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. 2 1 3 1.Gate 2.Drain 3.Source FEATURES  83A, 600V, RDS(on)(typ.)=28.
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