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SVSP60R090LHD4 - 600V SUPER JUNCTION MOS POWER TRANSISTOR

This page provides the datasheet information for the SVSP60R090LHD4, a member of the SVSP60R090P7HD4-SilanMicroelectronics 600V SUPER JUNCTION MOS POWER TRANSISTOR family.

Description

SVSP60R090P7(L)(FJD)(T)(S)HD4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

Features

  • 38A, 600V, RDS(on)(typ. )=75mΩ@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant KEY.

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Datasheet preview – SVSP60R090LHD4

Datasheet Details

Part number SVSP60R090LHD4
Manufacturer Silan Microelectronics
File Size 625.28 KB
Description 600V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet download datasheet SVSP60R090LHD4 Datasheet
Additional preview pages of the SVSP60R090LHD4 datasheet.

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Full PDF Text Transcription

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Silan Microelectronics SVSP60R090P7(L)(FJD)(T)(S)HD4_Datasheet 38A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP60R090P7(L)(FJD)(T)(S)HD4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. FEATURES  38A, 600V, RDS(on)(typ.
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