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SVSP65R080P7HD4 - 650V SUPER JUNCTION MOS POWER TRANSISTOR

This page provides the datasheet information for the SVSP65R080P7HD4, a member of the SVSP65R080P7HD4-SilanMicroelectronics 650V SUPER JUNCTION MOS POWER TRANSISTOR family.

Datasheet Summary

Description

SVSP65R080P7HD4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

Features

  • 43A, 650V, RDS(on)(typ. )=66mΩ@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant 12 3 TO-247-3L KEY.

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Datasheet preview – SVSP65R080P7HD4

Datasheet Details

Part number SVSP65R080P7HD4
Manufacturer Silan Microelectronics
File Size 478.43 KB
Description 650V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet download datasheet SVSP65R080P7HD4 Datasheet
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Full PDF Text Transcription

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Silan Microelectronics SVSP65R080P7HD4_Datasheet 43A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP65R080P7HD4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. 2 1 3 1.Gate 2.Drain 3.Source FEATURES  43A, 650V, RDS(on)(typ.
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