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SVSP7N60DE2TR - 600V DP MOS POWER TRANSISTOR

This page provides the datasheet information for the SVSP7N60DE2TR, a member of the SVSP7N60FE2 600V DP MOS POWER TRANSISTOR family.

Description

SVSP7N60F(D)E2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology.

It achieves low conduction loss and switching losses.

It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.

Features

  • 7A,600V, RDS(on)(typ. )=0.48@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Enhanced avalanche capability.
  • Extreme dv/dt rated.
  • High peak current capability.

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Datasheet preview – SVSP7N60DE2TR

Datasheet Details

Part number SVSP7N60DE2TR
Manufacturer Silan Microelectronics
File Size 328.87 KB
Description 600V DP MOS POWER TRANSISTOR
Datasheet download datasheet SVSP7N60DE2TR Datasheet
Additional preview pages of the SVSP7N60DE2TR datasheet.

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Full PDF Text Transcription

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Silan Microelectronics SVSP7N60F(D)E2_Datasheet 7A, 600V DP MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(D)E2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, for example, it is suitable for hard and soft switching topologies. FEATURES  7A,600V, RDS(on)(typ.)=0.48@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Enhanced avalanche capability  Extreme dv/dt rated  High peak current capability NOMENCLATURE 2 1 3 1.Gate 2.Drain 3.
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