SVSP7N70FD2 Datasheet PDF (700V DP MOS POWER TRANSISTOR) | Download Silan Microelectronics SVSP7N70FD2

SVSP7N70FD2 - 700V DP MOS POWER TRANSISTOR

Description

SVSP7N70F(D)(S)(FJD)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology.

It achieves low conduction loss and switching losses.

Features

7A, 700V, RDS(on)(typ. )=0.52@VGS=10V.
New revolutionary high voltage technology.
Ultra low gate charge.
Periodic avalanche rated.
Extreme dv/dt rated.
High peak current capability.

Datasheet Details

Part number	SVSP7N70FD2
Manufacturer	Silan Microelectronics
File Size	398.90 KB
Description	700V DP MOS POWER TRANSISTOR
Datasheet	SVSP7N70FD2 Datasheet
Additional preview pages of the SVSP7N70FD2 datasheet.

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Full PDF Text Transcription

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Silan Microelectronics SVSP7N70F(D)(S)(FJD)D2_Datasheet 7A, 700V DP MOS POWER TRANSISTOR DESCRIPTION 2 SVSP7N70F(D)(S)(FJD)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. FEATURES  7A, 700V, RDS(on)(typ.)=0.52@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Periodic avalanche rated  Extreme dv/dt rated  High peak current capability NOMENCLATURE 1 3 1.Gate 2.Drain 3.

Published: Mar 9, 2020 |