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SVSP7N70SD2 - 700V DP MOS POWER TRANSISTOR

This page provides the datasheet information for the SVSP7N70SD2, a member of the SVSP7N70FD2 700V DP MOS POWER TRANSISTOR family.

Description

SVSP7N70F(D)(S)(FJD)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology.

It achieves low conduction loss and switching losses.

Features

  • 7A, 700V, RDS(on)(typ. )=0.52@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability.

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Datasheet preview – SVSP7N70SD2

Datasheet Details

Part number SVSP7N70SD2
Manufacturer Silan Microelectronics
File Size 398.90 KB
Description 700V DP MOS POWER TRANSISTOR
Datasheet download datasheet SVSP7N70SD2 Datasheet
Additional preview pages of the SVSP7N70SD2 datasheet.

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Full PDF Text Transcription

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Silan Microelectronics SVSP7N70F(D)(S)(FJD)D2_Datasheet 7A, 700V DP MOS POWER TRANSISTOR DESCRIPTION 2 SVSP7N70F(D)(S)(FJD)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. FEATURES  7A, 700V, RDS(on)(typ.)=0.52@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Periodic avalanche rated  Extreme dv/dt rated  High peak current capability NOMENCLATURE 1 3 1.Gate 2.Drain 3.
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