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SVSP14N65TD2 - 650V SUPER JUNCTION MOS POWER TRANSISTOR

This page provides the datasheet information for the SVSP14N65TD2, a member of the SVSP14N65FJD 650V SUPER JUNCTION MOS POWER TRANSISTOR family.

Datasheet Summary

Description

SVSP14N65FJD/T/KD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DPMOS technology.

It achieves low conduction loss and switching losses.

Features

  • 14A,650V, RDS(on)(typ. )=0.26@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability 123 12 3 TO-220FJD-3L TO-220-3L.

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Datasheet preview – SVSP14N65TD2

Datasheet Details

Part number SVSP14N65TD2
Manufacturer Silan Microelectronics
File Size 303.37 KB
Description 650V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet download datasheet SVSP14N65TD2 Datasheet
Additional preview pages of the SVSP14N65TD2 datasheet.

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Silan Microelectronics SVSP14N65FJD/T/KD2_Datasheet 14A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP14N65FJD/T/KD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DPMOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. 2 1 1 23 3 TO-262-3L 1.Gate 2.Drain 3.Source FEATURES  14A,650V, RDS(on)(typ.)=0.
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