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SVSP14N60FJDD2 - 600V DP MOS POWER TRANSISTOR

This page provides the datasheet information for the SVSP14N60FJDD2, a member of the SVSP14N60TD2 600V DP MOS POWER TRANSISTOR family.

Description

SVSP14N60F(FJD)(T)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

Features

  • 2 1 3 1.Gate 2.Drain 3.Source 1 2 3 TO-220-3L 123 TO-220F-3L.
  • 14A, 600V, RDS(on)(typ. )=0.25@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability 12 3 TO-220FJD-3L.

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Datasheet preview – SVSP14N60FJDD2

Datasheet Details

Part number SVSP14N60FJDD2
Manufacturer Silan Microelectronics
File Size 287.08 KB
Description 600V DP MOS POWER TRANSISTOR
Datasheet download datasheet SVSP14N60FJDD2 Datasheet
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Full PDF Text Transcription

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Silan Microelectronics SVSP14N60F(FJD)(T)D2_Datasheet 14A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP14N60F(FJD)(T)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. FEATURES 2 1 3 1.Gate 2.Drain 3.Source 1 2 3 TO-220-3L 123 TO-220F-3L  14A, 600V, RDS(on)(typ.)=0.
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