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SVSP11N60FJDD2 - 600V SUPER JUNCTION MOS POWER TRANSISTOR

This page provides the datasheet information for the SVSP11N60FJDD2, a member of the SVSP11N60DD2 600V SUPER JUNCTION MOS POWER TRANSISTOR family.

Datasheet Summary

Description

SVSP11N60D/F/S/FJD/T/KD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

Features

  • 11A,600V, RDS(on)(typ. )=0.3@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability 2 1 1 3 TO-263-2L 3 1 1.Gate 2.Drain 3.Source 3 TO-252-2L 1 2 3 TO-220-3L 12 3 TO-262-3L 123 TO-220FJD-3L 12 3 TO-220F-3L.

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Datasheet preview – SVSP11N60FJDD2

Datasheet Details

Part number SVSP11N60FJDD2
Manufacturer Silan Microelectronics
File Size 430.27 KB
Description 600V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet download datasheet SVSP11N60FJDD2 Datasheet
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Full PDF Text Transcription

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Silan Microelectronics SVSP11N60D/F/S/FJD/T/KD2_Datasheet 11A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N60D/F/S/FJD/T/KD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. FEATURES  11A,600V, RDS(on)(typ.)=0.3@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Periodic avalanche rated  Extreme dv/dt rated  High peak current capability 2 1 1 3 TO-263-2L 3 1 1.Gate 2.Drain 3.
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