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SVSP11N65F - 650V SUPER JUNCTION MOS POWER TRANSISTOR

This page provides the datasheet information for the SVSP11N65F, a member of the SVSP11N65D 650V SUPER JUNCTION MOS POWER TRANSISTOR family.

Datasheet Summary

Description

SVSP11N65D/F/S/FJD/K/TD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

Features

  • 11A,650V, RDS(on)(typ. )=0.33@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability 12 3 TO-220F-3L 1 3 TO-252-2L.

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Datasheet preview – SVSP11N65F

Datasheet Details

Part number SVSP11N65F
Manufacturer Silan Microelectronics
File Size 408.93 KB
Description 650V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet download datasheet SVSP11N65F Datasheet
Additional preview pages of the SVSP11N65F datasheet.

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Full PDF Text Transcription

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Silan Microelectronics SVSP11N65D/F/S/FJD/K/TD2_Datasheet 11A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP11N65D/F/S/FJD/K/TD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. 2 1 1 3 TO-263-2L 3 1.Gate 2.Drain 3.Source 1 2 3 TO-220-3L 123 TO-220FJD-3L 12 3 TO-262-3L FEATURES  11A,650V, RDS(on)(typ.)=0.
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