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SVSP14N65FJD - 650V SUPER JUNCTION MOS POWER TRANSISTOR

Datasheet Summary

Description

SVSP14N65FJD/T/KD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DPMOS technology.

It achieves low conduction loss and switching losses.

Features

  • 14A,650V, RDS(on)(typ. )=0.26@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability 123 12 3 TO-220FJD-3L TO-220-3L.

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Datasheet preview – SVSP14N65FJD

Datasheet Details

Part number SVSP14N65FJD
Manufacturer Silan Microelectronics
File Size 303.37 KB
Description 650V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet download datasheet SVSP14N65FJD Datasheet
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Silan Microelectronics SVSP14N65FJD/T/KD2_Datasheet 14A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP14N65FJD/T/KD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DPMOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. 2 1 1 23 3 TO-262-3L 1.Gate 2.Drain 3.Source FEATURES  14A,650V, RDS(on)(typ.)=0.
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