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SVS6N80F - TRANSISTOR

Download the SVS6N80F datasheet PDF (SVS6N80T included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for transistor.

Description

SVS6N80T/D/F is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Silan’s DP MOS technology.

It achieves low conduction loss and switching losses.

Features

  • 6A,800V, RDS(on)(typ. )=0.8Ω@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVS6N80T-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVS6N80F
Manufacturer Silan Microelectronics
File Size 413.11 KB
Description TRANSISTOR
Datasheet download datasheet SVS6N80F Datasheet

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Full PDF Text Transcription

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SVS6N80T/D/F_Datasheet 6A, 800V DP MOS POWER TRANSISTOR DESCRIPTION SVS6N80T/D/F is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. FEATURES  6A,800V, RDS(on)(typ.)=0.8Ω@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Periodic avalanche rated  Extreme dv/dt rated  High peak current capability ORDERING INFORMATION Part No.
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