Datasheet4U Logo Datasheet4U.com

SVS60R190P7D4 - 600V SUPER JUNCTION MOS POWER TRANSISTOR

Download the SVS60R190P7D4 datasheet PDF. This datasheet also covers the SVS60R190FJDD4 variant, as both devices belong to the same 600v super junction mos power transistor family and are provided as variant models within a single manufacturer datasheet.

Description

SVS60R190FJD(F)(D)(L8A)(T)(S)(K)(P7)(PN)D4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

Features

  • 123 1 TO-220FJD-3L 3 1.Gate 2.Drain 3.Source 1 2 3 13 TO-252-2L D(2) G(1) S(3) S(3) S(3) TO-220F-3L DFN-4-8x8x0.85-2.0 123 TO-220-3L 1 3 TO-263-2L 12 3 TO-262-3L.
  • 20A, 600V, RDS(on)(typ. )=0.165@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant 12 3 TO-3P 12 3 TO-247-3L KEY P.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVS60R190FJDD4-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVS60R190P7D4
Manufacturer Silan Microelectronics
File Size 721.07 KB
Description 600V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet download datasheet SVS60R190P7D4 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SVSP65R110FJDHD4 650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Semiconductors
SVSP65R110LHD4 650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Semiconductors
SVSP65R110P7HD4 650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Semiconductors
SVSP65R110SHD4 650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Semiconductors
SVSP65R110THD4 650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Semiconductors

Other Datasheets by Silan Microelectronics

Part Number Description
SVS60R190PND4 600V SUPER JUNCTION MOS POWER TRANSISTOR
SVS60R190FJDD4 600V SUPER JUNCTION MOS POWER TRANSISTOR
SVS60R190KD4 600V SUPER JUNCTION MOS POWER TRANSISTOR
SVS60R190SD4 600V SUPER JUNCTION MOS POWER TRANSISTOR
SVS60R360DE3 600V SUPER JUNCTION MOS POWER TRANSISTOR

Full PDF Text Transcription

Click to expand full text
Silan Microelectronics SVS60R190FJD(F)(D)(L8A)(T)(S)(K)(P7)(PN)D4_Datasheet 20A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION 2 SVS60R190FJD(F)(D)(L8A)(T)(S)(K)(P7)(PN)D4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. FEATURES 123 1 TO-220FJD-3L 3 1.Gate 2.Drain 3.Source 1 2 3 13 TO-252-2L D(2) G(1) S(3) S(3) S(3) TO-220F-3L DFN-4-8x8x0.85-2.0 123 TO-220-3L 1 3 TO-263-2L 12 3 TO-262-3L  20A, 600V, RDS(on)(typ.)=0.
Published: |