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Silan Microelectronics SVS60R190FJD(F)(D)(L8A)(T)(S)(K)(P7)(PN)D4_Datasheet
20A, 600V SUPER JUNCTION MOS POWER TRANSISTOR
DESCRIPTION
2
SVS60R190FJD(F)(D)(L8A)(T)(S)(K)(P7)(PN)D4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies.
FEATURES
123
1
TO-220FJD-3L
3
1.Gate 2.Drain 3.Source 1 2 3
13
TO-252-2L
D(2) G(1)
S(3) S(3) S(3)
TO-220F-3L
DFN-4-8x8x0.85-2.0
123 TO-220-3L
1 3
TO-263-2L
12 3
TO-262-3L
20A, 600V, RDS(on)(typ.)=0.
SVS60R190FJDD4 Datasheet
