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SVS6N60D - TRANSISTOR

Description

SVS6N60D is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Silan’s DP MOS technology.

It achieves low conduction loss and switching losses.

Features

  • 6A,600V, RDS(on)(typ. )=0.6Ω@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability.

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Datasheet Details

Part number SVS6N60D
Manufacturer Silan Microelectronics
File Size 243.05 KB
Description TRANSISTOR
Datasheet download datasheet SVS6N60D Datasheet

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Full PDF Text Transcription

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SVS6N60D_Datasheet 6A, 600V DP MOS POWER TRANSISTOR DESCRIPTION SVS6N60D is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. FEATURES  6A,600V, RDS(on)(typ.)=0.6Ω@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Periodic avalanche rated  Extreme dv/dt rated  High peak current capability ORDERING INFORMATION Part No.
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